Product | 512GB Micron 3500 M.2 PCIe 4.0 x4 NVMe Solid State Drive | 1.0TB Micron 3500 M.2 PCIe 4.0 x4 NVMe Solid State Drive | 2.0TB Micron 3500 M.2 PCIe 4.0 x4 NVMe Solid State Drive | 500GB Samsung 970 EVO Plus M.2 PCIe 3.0 x4 NVMe Solid State Drive | 1.0TB Samsung 970 EVO Plus M.2 PCIe 3.0 x4 NVMe Solid State Drive | 2.0TB Samsung 970 EVO Plus M.2 PCIe 3.0 x4 NVMe Solid State Drive | 512GB Kioxia XG8 M.2 PCIe 4.0 x4 NVMe Solid State Drive | 1.0TB Kioxia XG8 M.2 PCIe 4.0 x4 NVMe Solid State Drive | 2.0TB Kioxia XG8 M.2 PCIe 4.0 x4 NVMe Solid State Drive | 4.0TB Kioxia XG8 M.2 PCIe 4.0 x4 NVMe Solid State Drive |
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Main Specifications | ||||||||||
Product Type | Workstation | Workstation | Workstation | Workstation | Workstation | Workstation | Client | Client | Client | Client |
Storage Capacity | 512GB | 1TB | 2TB | 500GB | 1.0TB | 2.0TB | 512GB | 1.0TB | 2.0TB | 4.0TB |
Form Factor | M.2 | M.2 | M.2 | M.2 | M.2 | M.2 | M.2 | M.2 | M.2 | M.2 |
Interface | PCIe Gen4, NVMe 2.0c | PCIe Gen4, NVMe 2.0c | PCIe Gen4, NVMe 2.0c | PCIe 3.0 x4 NVMe | PCIe 3.0 x4 NVMe | PCIe 3.0 x4 NVMe | PCIe 4.0 x4 NVMe | PCIe 4.0 x4 NVMe | PCIe 4.0 x4 NVMe | PCIe 4.0 x4 NVMe |
Cache | Samsung 1GB Low Power DDR4 SDRAM | Samsung 1GB Low Power DDR4 SDRAM | Samsung 1GB Low Power DDR4 SDRAM | |||||||
Series | 3500 | 3500 | 3500 | 970 EVO Plus | 970 EVO Plus | 970 EVO Plus | XG8 | XG8 | XG8 | XG8 |
Encryption | AES 256-bit Encryption (Class 0) | AES 256-bit Encryption (Class 0) | AES 256-bit Encryption (Class 0) | |||||||
Z-height | 7.0mm | 7.0mm | 7.0mm | |||||||
Endurance | 1 DWPD | 1 DWPD | 1 DWPD | |||||||
Detailed Specifications | ||||||||||
Lifetime Endurance | 300TB Written | 600TB Written | 1200TB Written | |||||||
Life Expectancy | 2 million hours MTTF | 2 million hours MTTF | 2 million hours MTTF | 1.5 Million Hours MTBF | 1.5 Million Hours MTBF | 1.5 Million Hours MTBF | 1.5 million hours (MTBF) | 1.5 million hours (MTBF) | 1.5 million hours (MTBF) | 1.5 million hours (MTBF) |
Read IOPS | 680,000 IOPS | 1,050,000 IOPS | 1,150,000 IOPS | 480,000 IOPS (4KB, QD32) | 600,000 IOPS (4KB, QD32) | 620,000 IOPS (4KB, QD32) | ||||
Write IOPS | 700,000 IOPS | 1,150,000 IOPS | 1,150,000 IOPS | 550,000 IOPS (4KB, QD32) | 550,000 IOPS (4KB, QD32) | 560,000 IOPS (4KB, QD32) | ||||
Read Speed | 7000 MB/s | 7000 MB/s | 7000 MB/s | 3,500 MB/s | 3,500 MB/s | 3,500 MB/s | 7000 MB/s | 7000 MB/s | 7000 MB/s | 7000 MB/s |
Write Speed | 5100 MB/s | 6900 MB/s | 7000 MB/s | 3,200 MB/s | 3,300 MB/s | 3,300 MB/s | 5000 MB/s | 5600 MB/s | 5800 MB/s | 5800 MB/s |
NAND | 6th Generation 3D 232-layer TLC NAND | 6th Generation 3D 232-layer TLC NAND | 6th Generation 3D 232-layer TLC NAND | Samsung V-NAND 3-bit MLC | Samsung V-NAND 3-bit MLC | Samsung V-NAND 3-bit MLC | BiCS FLASH™ TLC | BiCS FLASH™ TLC | BiCS FLASH™ TLC | BiCS FLASH™ TLC |
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