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Product | 512GB Micron 3500 M.2 PCIe 4.0 x4 NVMe Solid State Drive | 1.0TB Micron 3500 M.2 PCIe 4.0 x4 NVMe Solid State Drive | 2.0TB Micron 3500 M.2 PCIe 4.0 x4 NVMe Solid State Drive | 1.0TB Samsung 990 PRO M.2 PCIe 4.0 x4 NVMe Solid State Drive | 2.0TB Samsung 990 PRO M.2 PCIe 4.0 x4 NVMe Solid State Drive | 4.0TB Samsung 990 PRO M.2 PCIe 4.0 x4 NVMe Solid State Drive | 512GB Kioxia XG8 M.2 PCIe 4.0 x4 NVMe Solid State Drive | 1.0TB Kioxia XG8 M.2 PCIe 4.0 x4 NVMe Solid State Drive | 2.0TB Kioxia XG8 M.2 PCIe 4.0 x4 NVMe Solid State Drive | 4.0TB Kioxia XG8 M.2 PCIe 4.0 x4 NVMe Solid State Drive |
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Main Specifications |
Product Type |
Workstation | Workstation | Workstation | Workstation | Workstation | Workstation | Client | Client | Client | Client |
Storage Capacity |
512GB | 1TB | 2TB | 1.0TB | 2.0TB | 4.0TB | 512GB | 1.0TB | 2.0TB | 4.0TB |
Form Factor |
M.2 | M.2 | M.2 | M.2 | M.2 | M.2 | M.2 | M.2 | M.2 | M.2 |
Interface |
PCIe Gen4, NVMe 2.0c | PCIe Gen4, NVMe 2.0c | PCIe Gen4, NVMe 2.0c | PCIe 4.0 x4 NVMe, NVMe 2.0 | PCIe 4.0 x4 NVMe, NVMe 2.0 | PCIe 4.0 x4 NVMe, NVMe 2.0 | PCIe 4.0 x4 NVMe | PCIe 4.0 x4 NVMe | PCIe 4.0 x4 NVMe | PCIe 4.0 x4 NVMe |
Cache |
| | | Samsung 1GB Low Power DDR4 SDRAM | Samsung 2GB Low Power DDR4 SDRAM | Samsung 2GB Low Power DDR4 SDRAM | | | | |
Series |
3500 | 3500 | 3500 | 990 PRO | 990 PRO | 990 PRO | XG8 | XG8 | XG8 | XG8 |
Encryption |
| | | AES 256-bit Encryption | AES 256-bit Encryption | AES 256-bit Encryption | | | | |
Endurance |
1 DWPD | 1 DWPD | 1 DWPD | | | | | | | |
Detailed Specifications |
Lifetime Endurance |
300TB Written | 600TB Written | 1200TB Written | 600 TBW | 1200 TBW | 2400 TBW | | | | |
Life Expectancy |
2 million hours MTTF | 2 million hours MTTF | 2 million hours MTTF | 1.5 Million Hours Reliability (MTBF) | 1.5 Million Hours Reliability (MTBF) | 1.5 Million Hours Reliability (MTBF) | 1.5 million hours (MTBF) | 1.5 million hours (MTBF) | 1.5 million hours (MTBF) | 1.5 million hours (MTBF) |
Read IOPS |
680,000 IOPS | 1,050,000 IOPS | 1,150,000 IOPS | Up to 1,200,000 | Up to 1,400,000 | Up to 1,600,000 | | | | |
Write IOPS |
700,000 IOPS | 1,150,000 IOPS | 1,150,000 IOPS | Up to 1,550,000 | Up to 1,550,000 | Up to 1,550,000 | | | | |
Read Speed |
7000 MB/s | 7000 MB/s | 7000 MB/s | Up to 7,450 MB/s | Up to 7,450 MB/s | Up to 7,450 MB/s | 7000 MB/s | 7000 MB/s | 7000 MB/s | 7000 MB/s |
Write Speed |
5100 MB/s | 6900 MB/s | 7000 MB/s | Up to 6,900 MB/s | Up to 6,900 MB/s | Up to 6,900 MB/s | 5000 MB/s | 5600 MB/s | 5800 MB/s | 5800 MB/s |
NAND |
6th Generation 3D 232-layer TLC NAND | 6th Generation 3D 232-layer TLC NAND | 6th Generation 3D 232-layer TLC NAND | Samsung V-NAND 3-bit MLC | Samsung V-NAND 3-bit MLC | Samsung V-NAND 3-bit MLC | BiCS FLASH™ TLC | BiCS FLASH™ TLC | BiCS FLASH™ TLC | BiCS FLASH™ TLC |
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