Product1.0TB Crucial T700 M.2 PCIe 5.0 x4 NVMe 2.0 Solid State Drive with heatsink2.0TB Crucial T700 M.2 PCIe 5.0 x4 NVMe 2.0 Solid State Drive with heatsink4.0TB Crucial T700 M.2 PCIe 5.0 x4 NVMe 2.0 Solid State Drive with heatsink512GB Micron 3500 M.2 PCIe 4.0 x4 NVMe Solid State Drive1.0TB Micron 3500 M.2 PCIe 4.0 x4 NVMe Solid State Drive2.0TB Micron 3500 M.2 PCIe 4.0 x4 NVMe Solid State Drive1.0TB Samsung 990 PRO M.2 PCIe 4.0 x4 NVMe Solid State Drive2.0TB Samsung 990 PRO M.2 PCIe 4.0 x4 NVMe Solid State Drive4.0TB Samsung 990 PRO M.2 PCIe 4.0 x4 NVMe Solid State Drive512GB Kioxia XG8 M.2 PCIe 4.0 x4 NVMe Solid State Drive1.0TB Kioxia XG8 M.2 PCIe 4.0 x4 NVMe Solid State Drive2.0TB Kioxia XG8 M.2 PCIe 4.0 x4 NVMe Solid State Drive4.0TB Kioxia XG8 M.2 PCIe 4.0 x4 NVMe Solid State Drive
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Main Specifications
Product Type ClientClientClientWorkstationWorkstationWorkstationWorkstationWorkstationWorkstationClientClientClientClient
Storage Capacity 1.0TB2.0TB4.0TB512GB1TB2TB1.0TB2.0TB4.0TB512GB1.0TB2.0TB4.0TB
Form Factor M.2M.2M.2M.2M.2M.2M.2M.2M.2M.2M.2M.2M.2
Interface PCIe 5.0 NVMePCIe 5.0 NVMePCIe 5.0 NVMePCIe Gen4, NVMe 2.0cPCIe Gen4, NVMe 2.0cPCIe Gen4, NVMe 2.0cPCIe 4.0 x4 NVMe, NVMe 2.0PCIe 4.0 x4 NVMe, NVMe 2.0PCIe 4.0 x4 NVMe, NVMe 2.0PCIe 4.0 x4 NVMePCIe 4.0 x4 NVMePCIe 4.0 x4 NVMePCIe 4.0 x4 NVMe
Cache Samsung 1GB Low Power DDR4 SDRAMSamsung 2GB Low Power DDR4 SDRAMSamsung 2GB Low Power DDR4 SDRAM
Series T700T700T700350035003500990 PRO990 PRO990 PROXG8XG8XG8XG8
Encryption AES 256-bit EncryptionAES 256-bit EncryptionAES 256-bit Encryption
Endurance 1 DWPD1 DWPD1 DWPD
Detailed Specifications
Lifetime Endurance 600 TBW1200 TBW2400 TBW300TB Written600TB Written1200TB Written600 TBW1200 TBW2400 TBW
Life Expectancy 2 million hours MTTF2 million hours MTTF2 million hours MTTF1.5 Million Hours Reliability (MTBF)1.5 Million Hours Reliability (MTBF)1.5 Million Hours Reliability (MTBF)1.5 million hours (MTBF)1.5 million hours (MTBF)1.5 million hours (MTBF)1.5 million hours (MTBF)
Read IOPS 680,000 IOPS1,050,000 IOPS1,150,000 IOPSUp to 1,200,000Up to 1,400,000Up to 1,600,000
Write IOPS 700,000 IOPS1,150,000 IOPS1,150,000 IOPSUp to 1,550,000Up to 1,550,000Up to 1,550,000
Read Speed 11,700 MB/s12,400 MB/s12,400 MB/s7000 MB/s7000 MB/s7000 MB/sUp to 7,450 MB/sUp to 7,450 MB/sUp to 7,450 MB/s7000 MB/s7000 MB/s7000 MB/s7000 MB/s
Write Speed 9,500 MB/s11,800 MB/s11,800 MB/s5100 MB/s6900 MB/s7000 MB/sUp to 6,900 MB/sUp to 6,900 MB/sUp to 6,900 MB/s5000 MB/s5600 MB/s5800 MB/s5800 MB/s
NAND Micron® 232-layer TLC NANDMicron® 232-layer TLC NANDMicron® 232-layer TLC NAND6th Generation 3D 232-layer TLC NAND6th Generation 3D 232-layer TLC NAND6th Generation 3D 232-layer TLC NANDSamsung V-NAND 3-bit MLCSamsung V-NAND 3-bit MLCSamsung V-NAND 3-bit MLCBiCS FLASH™ TLCBiCS FLASH™ TLCBiCS FLASH™ TLCBiCS FLASH™ TLC
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